Understanding of a new approach for silicon nitride spacer etching using gaseous hydrofluoric acid after hydrogen ion implantation
| Autor: | Sébastien Barnola, Névine Rochat, Olivier Pollet, C. Guedj, Vincent Ah-Leung, Maxime Garcia Barros, Nicolas Posseme, G. Audoit |
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| Přispěvatelé: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), Département Plate-Forme Technologique (DPFT), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)) |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Plasma etching business.industry Analytical chemistry 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surfaces Coatings and Films chemistry.chemical_compound [SPI]Engineering Sciences [physics] Ion implantation Hydrofluoric acid Silicon nitride chemistry Etching (microfabrication) 0103 physical sciences Optoelectronics Dry etching Reactive-ion etching 0210 nano-technology business Buffered oxide etch |
| Zdroj: | Journal of Vacuum Science and Technology A Journal of Vacuum Science and Technology A, American Vacuum Society, 2017, 35 (2), pp.021408. ⟨10.1116/1.4977077⟩ Journal of Vacuum Science & Technology A Journal of Vacuum Science & Technology A, 2017, 35 (2), pp.021408. ⟨10.1116/1.4977077⟩ |
| ISSN: | 0734-2101 |
| Popis: | International audience; Silicon nitride spacer etching is one of the most critical step for the fabrication of CMOS transistors in microelectronics. It is usually done by plasma etching using a fluorocarbon based chemistry. However, from the 14 nm technology node and beyond, this etching process no longer allows the etch specifications to be reached (nonformation of a foot, poor critical dimension control below 1 nm). To overcome this issue, a new process was developed. It consists of two steps in a first step, the silicon nitride film is modified by light ion implantation (hydrogen), and then followed by a removal step of this modified film by hydrofluoric acid (HF). In this paper, the authors propose to remove the implanted/modified silicon nitride using gaseous HF and understand the associated etching mechanisms using infrared spectroscopy and x-ray photoelectron spectroscopy at different stages of the process sequence (after implantation/modification, gaseous HF process, and post-treatment). |
| Databáze: | OpenAIRE |
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