Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth
| Autor: | Yuri Lelikov, Andrey Zubrilov, Natalia Bochkareva, Y. G. Shreter, Vladislav Voronenkov, Ruslan Gorbunov, Philipp Latyshev |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Analytical chemistry FOS: Physical sciences chemistry.chemical_element Applied Physics (physics.app-ph) 02 engineering and technology Epitaxy 01 natural sciences law.invention Magazine law 0103 physical sciences Materials Chemistry Growth rate Electrical and Electronic Engineering Gallium Quartz 010302 applied physics Condensed Matter - Materials Science Hydride Materials Science (cond-mat.mtrl-sci) Physics - Applied Physics Surfaces and Interfaces Injector 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Vacuum chamber 0210 nano-technology |
| Zdroj: | physica status solidi (a). 217:1900629 |
| ISSN: | 1862-6319 1862-6300 |
| DOI: | 10.1002/pssa.201900629 |
| Popis: | An HVPE reactor for the growth of bulk GaN crystals with a diameter of 50 mm was developed. Growth rate non-uniformity of 1% was achieved using an axisymmetric vertical gas injector with stagnation point flow. Chemically-resistant refractory materials were used instead of quartz in the reactor hot zone. High-capacity external gallium precursor sources were developed for the non-stop growth of the bulk GaN layers. A load-lock vacuum chamber and a dry in-situ growth chamber cleaning were implemented to improve the growth process reproducibility. Freestanding GaN crystals with a diameter of 50 mm were grown with the reactor. |
| Databáze: | OpenAIRE |
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