The curious case of thin-body Ge crystallization
| Autor: | Ran Yu, Michael Schmidt, Nikolay Petkov, Alan Blake, Anne-Marie Kelleher, Ray Duffy, Luis A. Marqués, Brendan McCarthy, Jim Scully, Lourdes Pelaz, Maryam Shayesteh, Mary Anne White |
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| Rok vydání: | 2011 |
| Předmět: |
Silicon
Materials science Physics and Astronomy (miscellaneous) Crystal defects Field Elemental semiconductors Crystal structure Stacking faults Crystals Annealing law.invention Crystal law Crystallization Condensed matter physics Germanium Crystallites Crystallisation Crystallographic defect Amorphous solid Crystallography Ion implantation Cristalización Transmission electron microscopy Twin boundaries Crystallite Layers Ion-implantation |
| Zdroj: | UVaDOC. Repositorio Documental de la Universidad de Valladolid instname |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.3643160 |
| Popis: | Producción Científica The authors investigate the templated crystallization of thin-body Ge fin structures with high aspect ratios. Experimental variables include fin thickness and thermal treatments, with fin structures oriented in the 〈110〉 direction. Transmission electron microscopy determined that various crystal defects form during crystallization of amorphous Ge regions, most notably {111} stacking faults, twin boundaries, and small crystallites. In all cases, the nature of the defects is dependent on the fin thickness and thermal treatments applied. Using a standard 600 °C rapid-thermal-anneal, Gestructures with high aspect ratios crystallize with better crystal quality and fewer uncured defects than the equivalent Si case, which is a cause for optimism for thin-film Ge devices. Science Foundation Ireland under Research Grant Nos. 09/SIRG/I1623 and 09/SIRG/I1621. |
| Databáze: | OpenAIRE |
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