Influence of the electro-optical properties of an a-Si:H single layer on the performances of a pin solar cell

Autor: Francesca Simone, F.S. Ruggeri, G. Catania, Francesco Priolo, Isodiana Crupi, Francesco Ruffino, A. Grasso, A.M. Piro, Salvatore Mirabella, S. Di Marco
Přispěvatelé: Crupi, I., Ruggeri, F.S., Grasso, A., Ruffino, F., Catania, G., Piro, A.M., Di Marco, S., Mirabella, S., Simone, F., Priolo, F.
Jazyk: angličtina
Rok vydání: 2012
Předmět:
Amorphous silicon
Thin film material
Thin film solar cell
Activation energy
Single junction
Conductivity
Settore ING-INF/01 - Elettronica
Settore FIS/03 - Fisica Della Materia
law.invention
chemistry.chemical_compound
Electric conductivity
law
Materials Chemistry
Thin film
Absorption (electromagnetic radiation)
Preexponential factor
Gas-flow ratio
Metals and Alloys
Surfaces and Interfaces
Surfaces
Coatings and Films
Electronic
Optical and Magnetic Materials
Temperature dependence
Hydrogenated amorphous silicon
Optoelectronics
Electric propertie
Quantum efficiency
Hydrogenation
Optical data processing
Deposition condition
Silicon
Materials science
Activation energy
Synthesis condition
Vapor deposition
Silicon
Optics
Solar cell
Dark conductivity
Characterization studie
Electromagnetic wave absorption
Deposition
Electrooptical propertie
Thin film solar cell
business.industry
Energy conversion efficiency
Meyer-Neldel rule
Optical propertie
Optical measurement
electro-optical properties
Nanostructured material
Electrical transport
chemistry
Synthesis parameter
Optical variables measurement
Single layer
Conversion efficiency
business
Optical gap
Zdroj: Thin Solid Films, 520(11), 4036-4040
Thin Solid Films 520 (2012) 11
ISSN: 0040-6090
Popis: We analyze the results of an extensive characterization study involving electrical and optical measurements carried out on hydrogenated amorphous silicon (α-Si:H) thin film materials fabricated under a wide range of deposition conditions. By adjusting the synthesis parameters, we evidenced how conductivity, activation energy, electrical transport and optical absorption of an α-Si:H layer can be modified and optimized. We analyzed the activation energy and the pre-exponential factor of the dark conductivity by varying the dopant-to-silane gas flow ratio. Optical measurements allowed to extract the absorption spectra and the optical bandgap. Additionally, we report on the temperature dependence of the activation energy to satisfy the Meyer-Neldel rule. Finally, the influence of the individual films parameters upon the final performances of a single junction pin α-Si:H have been studied. The measurements show how a more than doubled enhancement in energy conversion efficiency can be obtained in an α-Si:H solar cell with a proper selection of synthesis conditions. © 2012 Elsevier B.V. All rights reserved.
Databáze: OpenAIRE
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