Gate-controlled spin–valley–layer locking in bilayer transition-metal dichalcogenides
| Autor: | H Khani, S. Piri Pishekloo |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Valence (chemistry) Condensed matter physics business.industry Bilayer 02 engineering and technology Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Thermal conduction 01 natural sciences Magnetic field Semiconductor Transition metal 0103 physical sciences General Materials Science 010306 general physics 0210 nano-technology business Fermi Gamma-ray Space Telescope |
| Zdroj: | Nanoscale. 12:22281-22288 |
| ISSN: | 2040-3372 2040-3364 |
| DOI: | 10.1039/d0nr04630b |
| Popis: | The interplay between various internal degrees of freedom of electrons is of fundamental importance for designing high performance electronic devices. A particular instance of this interplay can be observed in bilayer TMDs due to the combined effect of spin-orbit and interlayer couplings. We study the transport of spin, valley and layer pseudospin, generally, through a magnetoelectric barrier in AB-stacked bilayer TMDs and demonstrate an electrically controllable platform for multifunctional and ultra-high-speed logic devices. Perfect spin and valley polarizations as well as good layer localization of electrons occur in a rather large range of Fermi energies for moderate electric and magnetic fields. Any number of these polarizations can be inverted by adjusting the two potential gates on the two layers. Furthermore, the conditions for the excellent polarizations are determined for the spin, valley and layer degrees of freedom, in terms of the adjustable system parameters. We discuss the individual electric and magnetic barriers and show that the single electric barrier acts as a bipolar pseudospin semiconductor with opposite polarizations for the conduction and valence bands. The results of this study pave the way for multifunctional pseudospintronic applications based on 2D materials. |
| Databáze: | OpenAIRE |
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