In2O3 films prepared by thermal oxidation of amorphous InSe thin films
| Autor: | M. Tepore, T. Siciliano, G. Micocci, Antonio Tepore, Alessandra Genga, M. Di Giulio |
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| Přispěvatelé: | Siciliano, Tiziana, DI GIULIO, Massimo, Tepore, Marco, Genga, Alessandra, Micocci, Gioacchino, Tepore, Antonio |
| Rok vydání: | 2012 |
| Předmět: |
Thermal oxidation
Materials science Scanning electron microscope Metals and Alloys Analytical chemistry Surfaces and Interfaces Evaporation (deposition) Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Carbon film X-ray crystallography Materials Chemistry Crystallite Thin film |
| Zdroj: | Thin Solid Films. 520:2455-2460 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2011.10.015 |
| Popis: | In2O3 thin films were prepared by the thermal oxidation of amorphous InSe films in air atmosphere. The structure, morphology and composition of the thermal annealed products were characterized by X-ray diffraction (XRD), scanning electron microscopy and energy-dispersive spectroscopy, respectively. The XRD patterns indicate that the as-deposited InSe films were amorphous and they fully transformed into polycrystalline In2O3 films with a cubic crystal structure in the preferential (222) orientation at a temperature around 600 °C. The optical energy gap of 3.66 eV was determined at room temperature by transmittance and reflectance measurements using UV–vis–NIR spectroscopy. A preliminary characterization shows that these films have a promising response towards NO2 gas at a working temperature around 180 °C. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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