Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr2Se4/AlGaAs/GaAs

Autor:	Jonker, B. T., Hanbicki, A. T., Kioseoglou, G., Li, C. H., Stroud, R. M., Sullivan, J. M., Erwin, S. C., Lüpke, G., Zhao, H. B., Ren, Y. H., Sun, B., Itskos, Grigorios, Mallory, R., Yasar, M., Petrou, Athos Chariton
Přispěvatelé:	Itskos, Grigorios [0000-0003-3971-3801]
Rok vydání:	2003
Předmět:	Spin polarization Materials science Ferromagnetic semiconductor Gallium arsenide Semiconducting selenium compounds chemistry.chemical_compound Condensed Matter::Materials Science Condensed Matter::Superconductivity Polarization Band alignments Band offsets Spin polarized transport Condensed matter physics business.industry Heterojunction Magnetic semiconductor Coercivity Magnetic hysteresis Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Coercive field Light emitting diodes Aluminum gallium arsenide Electrical spin injection Magnetic anisotropy Hysteresis chemistry Electroluminescence Hysteresis behavior Remanence Heterojunctions Ferromagnetism Optoelectronics Ferromagnetic materials Epitaxially grown business
Zdroj:	Intermag 2003-Program of the 2003 IEEE International Magnetics Conference 2003 IEEE International Magnetics Conference, Intermag 2003
Popis:	Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure of CdCr2Se4-AlGaAs-GaAs are studied. Epitaxially grown CdCr2Se4 films exhibit hysteresis behavior with significant remanence, an in- plane easy axis with a coercive field of 125 Oe. The cross section of the LED and the band alignment were shown. © 2003 IEEE. Sponsors: Magnetics Society of the Institute of Electrical and Electronics Engineers Conference code: 114081
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e763bf289fbd9e40ff38d3a8c19c3d21 http://gnosis.library.ucy.ac.cy/handle/7/58755 Zobrazit plný text záznamu