16kbit HfO 2 :Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility

Autor: Francois, T, Coignus, J, Makosiej, A, Giraud, B, Carabasse, C, Barbot, J, Martin, S, Castellani, N, Magis, T, Grampeix, H, van Duijn, S, Mounet, C, Chiquet, P, Schroeder, U, Slesazeck, S, Mikolajick, T, Nowak, E, Bocquet, Marc, Barrett, N, Andrieu, F, Grenouillet, L
Přispěvatelé: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), NaMLab gGmbH, CEA- Saclay (CEA), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: 67th Annual IEEE International Electron Devices Meeting (IEDM) 2021
67th Annual IEEE International Electron Devices Meeting (IEDM) 2021, Dec 2021, San Francisco, United States. ⟨10.1109/IEDM19574.2021.9720640⟩
DOI: 10.1109/IEDM19574.2021.9720640⟩
Popis: International audience; 16kbit 1T-1C FeRAM arrays are demonstrated at 130nm node with TiN/HfO2:Si/TiN ferroelectric capacitors integrated in the Back-End-of-Line (BEOL). Zero bit failure is reported at the array level, with memory window fully open down to 2.5V programming voltage, capacitor area down to 0.16µm² and switching speed down to 4ns. Promising endurance is reported at the array level up to 10 7 cycles. For the first time, solder reflow compatibility is demonstrated for HfO2-based FeRAM. These results pave the way to competitive ultra-low power embedded non-volatile memories at more advanced nodes.
Databáze: OpenAIRE
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