Electrical characterization of ITO/CuPc/Al diodes using temperature dependent capacitance spectroscopy and I-V measurements
| Autor: | F.T. Reis, P. Destruel, M. Oukachmih, S. Ould Saad, Isabelle Séguy, P. Jolinat, D. Mencaraglia |
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| Přispěvatelé: | Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2004 |
| Předmět: |
010302 applied physics
Range (particle radiation) Condensed matter physics Chemistry Fermi level 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 7. Clean energy Capacitance Space charge Electronic Optical and Magnetic Materials symbols.namesake 0103 physical sciences Electrode Materials Chemistry Ceramics and Composites symbols Electrical measurements Thin film 0210 nano-technology ComputingMilieux_MISCELLANEOUS Diode |
| Zdroj: | Journal of Non-Crystalline Solids Journal of Non-Crystalline Solids, Elsevier, 2004, 338-340, pp.599-602 Journal of Non-Crystalline Solids, 2004, 338-340, pp.599-602 |
| ISSN: | 0022-3093 |
| Popis: | Sandwich structures were prepared by vacuum sublimation of 100 nm thick CuPc thin films between ITO and Al electrodes. The rectifying behavior of these devices was analyzed with dc electrical measurements as a function of temperature in the range 100–310 K. Different regimes were observed with temperature and bias dependent transition. At low bias and high temperature, the results are best explained with Poole–Frenkel type transport model, while at high bias and low temperature, space charge limited current controlled by an exponential distribution of traps dominates the transport. Electrically active defects were investigated with space charge capacitance spectroscopy, as a function of temperature and frequency. The analysis of the capacitance data shows that the CuPc layer exhibits a rather high density of localized states at Fermi level. These results are discussed and compared with those of the temperature dependent J–V measurements. |
| Databáze: | OpenAIRE |
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