Chemical polishing of InAs, InSb, GaAs and GaSb

Autor:	Levchenko, I.V., Tomashyk, V.M., Stratiychuk, I.B., Malanych, G.P., Stanetska, A.S., Korchovyi, A.A.
Rok vydání:	2017
Předmět:	010302 applied physics Technology Materials science business.industry 020209 energy 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Polishing General Materials Science 02 engineering and technology business 01 natural sciences
Zdroj:	Functional materials. 24:654-659
ISSN:	2218-2993 1027-5495
DOI:	10.15407/fm24.04.654
Popis:	The mechanism and kinetics of chemical dissolution of InAs, InSb, GaAs and GaSb in (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching mixtures have been studied. Influence of tartaric acid on the parameters of chemical-dynamic polishing and morphology of the obtained crystals surface has been determined. Using of (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching solutions provides the controlled removal of thin layers and the polishing of investigated semiconductors. The polishing etchant compositions have been proposed and conditions for the chemical-dynamic polishing of the InAs, InSb, GaAs and GaSb crystals have been optimized.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7192d9f70c3683390cc73e7090f0070 https://doi.org/10.15407/fm24.04.654 Zobrazit plný text záznamu