A comparison between bottom contact and top contact all organic field effect transistors assembled by soft lithography

Autor: Annalisa Bonfiglio, Piero Cosseddu
Rok vydání: 2007
Předmět:
Zdroj: Thin solid films
515 (2007): 7551–7555.
info:cnr-pdr/source/autori:Cosseddu, P; Bonfiglio, A/titolo:A comparison between bottom contact and top contact all organic field effect transistors assembled by soft lithography/doi:/rivista:Thin solid films (Print)/anno:2007/pagina_da:7551/pagina_a:7555/intervallo_pagine:7551–7555/volume:515
ISSN: 0040-6090
Popis: All-organic Field Effect Transistors (FETs) on plastic were fabricated by means of an innovative, simple and inexpensive technique. A thin Mylar (R) foil acts both as substrate and gate dielectric. We used pentacene, deposited by thermal sublimation, as semiconducting layer while contacts were fabricated with poly(ethylene-dioxythiophene)/polystyrene sulfonate (PEDOT/PSS) by means of soft lithography. On the opposite side of the foil a thin PEDOT/PSS film, acting as gate electrode, was spin coated. It is worth noting that this technique allows the realization of bottom contact and top contact devices on the same substrate and with the same semiconducting layer. Furthermore, assisted by Scanning Probe Microscopy investigations, we investigated how the device structure influences its electrical properties in terms of hole mobility, Series Contact Resistance and parasitic capacitance effects. The comparison between top-contact and bottom-contact devices shows interesting marked differences that can be mainly attributed to a different quality of PEDOT/PSS-semiconductor interface. The flexibility of the obtained structure and the easy scalability of the technological process open the way for economic production of high-resolution organic devices. (c) 2007 Elsevier B.V. All rights reserved.
Databáze: OpenAIRE
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