Optimization of organized silicon nanowires growth inside porous anodic alumina template using hot wire chemical vapor deposition process
| Autor: | Emmanuel Lefeuvre, Didier Pribat, Zhanbing He, Jean-Luc Maurice, K.H. Kim, Marc Châtelet, Costel Sorin Cojocaru |
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| Přispěvatelé: | Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Department of Energy Science, Sungkyunkwan University [Suwon] (SKKU), NanodiX Chair with Samsung Electronics |
| Rok vydání: | 2011 |
| Předmět: |
Amorphous silicon
Materials science Hydrogen chemistry.chemical_element Porous alumina Nanotechnology 02 engineering and technology Chemical vapor deposition Tungsten 01 natural sciences chemistry.chemical_compound Silicon nanowires 0103 physical sciences Materials Chemistry Porosity 010302 applied physics PAA Metals and Alloys Surfaces and Interfaces 021001 nanoscience & nanotechnology Surfaces Coatings and Films Electronic Optical and Magnetic Materials Anode Membrane chemistry Chemical engineering Electrode [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Hot wire CVD 0210 nano-technology |
| Zdroj: | Thin Solid Films Thin Solid Films, Elsevier, 2011, 519, pp.4603. ⟨10.1016/j.tsf.2011.01.333⟩ |
| ISSN: | 0040-6090 |
| Popis: | International audience; A Hot Wire assisted Chemical Vapor Deposition (HWCVD) process has been developed for producing highdensity arrays of parallel, straight and organized silicon nanowires (SiNWs) inside vertical Porous Anodic Alumina (PAA) templates, exploring temperatures ranging from 430 °C to 600 °C, and pressures varying between 2.5 and 7.5 mbar. In order to prevent parasitic amorphous silicon (a-Si) deposit and to promote the crystalline SiNWs growth, we used a tungsten hot wire to partially crack H2 into atomic hydrogen, which acts like a selective etchant regarding a-Si. Here we describe the optimization route we followed to limit the deposit of a-Si onto the surface of the porous membrane and on the walls of the pores, which led to the possibility to grow SiNWs inside the PAA membranes. Such an approach has high potentialities for device realization, like PIN junctions, FETs or electrodes for Li-ion batteries. |
| Databáze: | OpenAIRE |
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