Investigation of the Mn3−δGa/MgO interface for magnetic tunneling junctions
| Autor: | G. H. Fecher, Eiji Ikenaga, Xenia Kozina, Shigemi Mizukami, Terunobu Miyazaki, Siham Ouardi, Claudia Felser, Carlos E. ViolBarbosa, Takahide Kubota |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Spin polarization Condensed matter physics General Physics and Astronomy chemistry.chemical_element Context (language use) engineering.material Heusler compound Characterization (materials science) Metal X-ray photoelectron spectroscopy chemistry visual_art engineering visual_art.visual_art_medium ddc:530 Gallium Quantum tunnelling |
| Zdroj: | Journal of applied physics 116(3), 034508 (2014). doi:10.1063/1.4890582 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.4890582 |
| Popis: | The Mn$_3$Ga Heusler compound and related alloys are the most promising materials for the realization of spin-transfer-torque switching in magneto tunneling junctions. Improved performance can be achieved by high quality interfaces in these multilayered structured devices. In this context, the interface between Mn$_{1.63}$Ga and MgO is of particular interest because of its spin polarization properties in tunneling junctions. We performed a chemical characterization of the MgO/Mn$_{1.63}$Ga junction by hard x-ray photoelectron spectroscopy (HAXPES). The experiment indicated the formation of Ga-O bonds at the interface and evidenced changes in the local environment of Mn atoms in the proximity of the MgO film. In addition, we show that the insertion of a metallic Mg-layer interfacing the MgO and Mn--Ga film strongly suppresses the oxidation of gallium. |
| Databáze: | OpenAIRE |
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