Development of Electrode Materials for Semiconductor Devices
| Autor: | Masanori Murakami, Yasuo Koide, Susumu Tsukimoto, Miki Moriyama |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Materials science
compound semiconductor business.industry Annealing (metallurgy) Mechanical Engineering ohmic contact regrowth Crystal growth intermediate semiconductor layer Semiconductor device Chemical vapor deposition Condensed Matter Physics Semiconductor Mechanics of Materials Electronic engineering Optoelectronics General Materials Science Electric current business Ohmic contact Molecular beam epitaxy |
| Zdroj: | Materials Science Forum. :1705-1714 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.475-479.1705 |
| Popis: | Recent strong demands for optoelectronic communication and portable telephones have encouraged engineers to develop optoelectronic devices, microwave devices, and high-speed devices using heterostructural compound semiconductors. Although the compound crystal growth techniques had reached at a level to control the compositional stoichiometry and crystal defects on a nearly atomic scale by the advanced techniques such as molecular beam epitaxy and metal organic chemical vapor deposition techniques, development of ohmic contact materials (which play a key role to inject external electric current from the metals to the semiconductors) was still on a trial-and-error basis. Our research efforts have been focused to develop, low resistance, refractory ohmic contact materials using the deposition and annealing techniques for n-GaAs, p-ZnSe, InP, p-SiC p-CdTe etc. It was found the growth of homo- or hetero–epitaxial intermediate semiconductor layers (ISL) was essential for low resistance contact formation. The importance of hetero-structural ISL was given taking an example of n-type ohmic contact for GaAs. |
| Databáze: | OpenAIRE |
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