AlGaN/GaN Heterostructure Transistors for the Generation and Detection of THz Radiation
| Autor: | Ennio Giovine, Florestano Evangelisti, Emilio Giovenale, D. Dominijanni, Claudio Lanzieri, Andrea Doria, A. Di Gaspare, Michele Ortolani, Ivan Spassovsky, Antonio Cetronio, Marco Peroni, Gian Piero Gallerano, Vittorio Foglietti |
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| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: |
Materials science
Terahertz radiation business.industry Amplifier Transistor Wide-bandgap semiconductor Heterojunction Gallium nitride AlGaN/gaN AlGaN/GaN heterostructures Electron systems THz detectors law.invention chemistry.chemical_compound AlGaN/GaN transistors chemistry law Logic gate Optoelectronics business Wave power |
| Zdroj: | IEEE Proc. of the 35th international conference on infrared millimetre and terahertz waves IRMMW-THz 2010, 2010 info:cnr-pdr/source/autori:E. Giovine, A. Di Gaspare, M. Ortolani, F. Evangelisti, V. Foglietti, A. Cetronio, D. Dominijanni, C. Lanzieri, M. Peroni, A. Doria, E. Giovenale, I. Spassovsky, G.P. Gallerano/congresso_nome:IEEE Proc. of the 35th international conference on infrared millimetre and terahertz waves IRMMW-THz 2010/congresso_luogo:/congresso_data:2010/anno:2010/pagina_da:/pagina_a:/intervallo_pagine 35th International Conference on Infrared, Millimeter and Terahertz Waves, 05-10/09/2010 info:cnr-pdr/source/autori:Giovine, E.; Di Gaspare, A.; Ortolani, M.; Evangelisti, F.; Foglietti, V.; Cetronio, A.; Dominijanni, D.; Lanzieri, C.; Peroni, M.; Doria, A.; Giovenale, E.; Spassovsky, I.; Gallerano, G. P./congresso_nome:35th International Conference on Infrared, Millimeter and Terahertz Waves/congresso_luogo:/congresso_data:05-10%2F09%2F2010/anno:2010/pagina_da:/pagina_a:/intervallo_pagine |
| Popis: | The AlGaN/GaN heterostructure is an excellent candidate for the realization of sub-millimeter wave power amplifiers, which can serve as integrated power source for THz frequency multipliers. Here we discuss the operation of AlGaN/GaN transistors as THz detector, which provides information on the behavior of the electron system at THz frequencies. © 2010 IEEE. |
| Databáze: | OpenAIRE |
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