Carrier recombination processes in GaAsN: from the dilute limit to alloying
| Autor: | E. Finkman, R. Intartaglia, Thierry Taliercio, Pierre Valvin, Pierre Lefebvre, U. Tisch, Thierry Guillet, Bernard Gil, Eric Tournié, J. Salzman, Thierry Bretagnon, M.-A. Pinault |
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| Přispěvatelé: | Groupe d'étude des semiconducteurs (GES), Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2 - Sciences et Techniques (UM2), Department of Electrical and Electronical and solid state institute, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Action Concertée Incitative (ACI) du MENRT 'BAND'., European Materials Society |
| Jazyk: | angličtina |
| Rok vydání: | 2004 |
| Předmět: |
010302 applied physics
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics] Photoluminescence Computer Networks and Communications Chemistry chemistry.chemical_element Epitaxy 01 natural sciences Nitrogen Molecular physics Atomic and Molecular Physics and Optics Exponential function 0103 physical sciences Radiative transfer [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic Spontaneous emission Electrical and Electronic Engineering Atomic physics [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 010306 general physics Recombination Molecular beam epitaxy |
| Zdroj: | IEE Proceedings-Optoelectronics. E-MRS Spring Meeting E-MRS Spring Meeting, European Materials Society, May 2004, Strasbourg, France. pp.365, ⟨10.1049/ip-opt:20040867⟩ |
| Popis: | International audience; Low-temperature time-resolved photoluminescence (TR-PL) experiments were used to study the dependence on nitrogen composition of the nature, the energy and the dynamics of radiative carrier recombinations in GaAs1-xNx alloys. Epitaxial layers were grown on [001] GaAs substrates by molecular beam epitaxy using solid sources for group-III and As elements, and a radiofrequency plasma source for N. The nitrogen content, measured by secondary ion mass spectroscopy, was in the range 5 × 10-5 - 7 × 10-2. PL spectra are dominated by the emission from the discrete states of nitrogen-based excitonic complexes for the very low x regime (around 5 × 10-5), showing exponential time decays. For x larger than 5 × 10-4, PL spectra are rather dominated by emission from a continuum of states originating from nitrogen clusters. In this case, nonexponential time decays are obtained. It is shown that these PL decays involve complex carrier transfers between the various available states. Changing the nitrogen content changes the recombination mechanism by changing the distance between the clusters. |
| Databáze: | OpenAIRE |
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