Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer
| Autor: | Eric R. Fossum, Zhehui Wang, Kaitlin M. Anagnost, Eldred Lee, Jifeng Liu |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
X-ray detection
Materials science Photon Silicon Physics::Instrumentation and Detectors chemistry.chemical_element TP1-1185 Scintillator Biochemistry Article Analytical Chemistry Optics indirect detection Electrical and Electronic Engineering Image sensor Instrumentation Image resolution image sensor business.industry Chemical technology Detector Photoelectric effect Atomic and Molecular Physics and Optics scintillator chemistry direct detection business Layer (electronics) |
| Zdroj: | Sensors Volume 21 Issue 22 Sensors (Basel, Switzerland) Sensors, Vol 21, Iss 7566, p 7566 (2021) |
| ISSN: | 1424-8220 |
| DOI: | 10.3390/s21227566 |
| Popis: | Simulation results are presented that explore an innovative, new design for X-ray detection in the 20–50 keV range that is an alternative to traditional direct and indirect detection methods. Typical indirect detection using a scintillator must trade-off between absorption efficiency and spatial resolution. With a high-Z layer that down-converts incident photons on top of a silicon detector, this design has increased absorption efficiency without sacrificing spatial resolution. Simulation results elucidate the relationship between the thickness of each layer and the number of photoelectrons generated. Further, the physics behind the production of electron-hole pairs in the silicon layer is studied via a second model to shed more light on the detector’s functionality. Together, the two models provide a greater understanding of this detector and reveal the potential of this novel form of X-ray detection. |
| Databáze: | OpenAIRE |
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