Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns
| Autor: | Grzegorz Lupina, Peter Zaumseil, Giovanni Capellini, Gang Niu, Thomas Schroeder, Marco Salvalaglio, Markus Andreas Schubert, Francesco Montalenti, Oliver Skibitzki, Tore Niermann, Ya-Hong Xie, H. M. Krause, Michael Lehmann, Anna Marzegalli |
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| Přispěvatelé: | Niu, Gang, Capellini, Giovanni, Lupina, Grzegorz, Niermann, Tore, Salvalaglio, Marco, Marzegalli, Anna, Schubert, Markus Andrea, Zaumseil, Peter, Krause, Hans Michael, Skibitzki, Oliver, Lehmann, Michael, Montalenti, Francesco, Xie, Ya Hong, Schroeder, Thomas, Niu, G, Capellini, G, Lupina, G, Niermann, T, Salvalaglio, M, Marzegalli, A, Schubert, M, Zaumseil, P, Krause, H, Skibitzki, O, Lehmann, M, Montalenti, F, Xie, Y, Schroeder, T |
| Rok vydání: | 2015 |
| Předmět: |
Materials science
Silicon chemistry.chemical_element elastic relaxation Germanium Nanotechnology 02 engineering and technology 01 natural sciences law.invention Macromolecular and Materials Chemistry Responsivity Engineering law 0103 physical sciences General Materials Science Wafer selective epitaxy Nanoscience & Nanotechnology 010306 general physics FIS/03 - FISICA DELLA MATERIA photodetection business.industry Graphene graphene Schottky diode Chemical Engineering 021001 nanoscience & nanotechnology germanium chemistry Chemical Sciences Optoelectronics Materials Science (all) Dislocation 0210 nano-technology business Molecular beam epitaxy Physical Chemistry (incl. Structural) |
| Zdroj: | Niu, G; Capellini, G; Lupina, G; Niermann, T; Salvalaglio, M; Marzegalli, A; et al.(2016). Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns. ACS APPLIED MATERIALS & INTERFACES, 8(3), 2017-2026. doi: 10.1021/acsami.5b10336. UCLA: Retrieved from: http://www.escholarship.org/uc/item/6335w5hd ACS applied materials & interfaces, vol 8, iss 3 |
| ISSN: | 1944-8252 |
| DOI: | 10.1021/acsami.5b10336. |
| Popis: | Dislocation networks are one of the most principle sources deteriorating the performances of devices based on lattice-mismatched heteroepitaxial systems. We demonstrate here a technique enabling fully coherent germanium (Ge) islands selectively grown on nanotip-patterned Si(001) substrates. The silicon (Si)-tip-patterned substrate, fabricated by complementary metal oxide semiconductor compatible nanotechnology, features ∼50-nm-wide Si areas emerging from a SiO2 matrix and arranged in an ordered lattice. Molecular beam epitaxy growths result in Ge nanoislands with high selectivity and having homogeneous shape and size. The ∼850 °C growth temperature required for ensuring selective growth has been shown to lead to the formation of Ge islands of high crystalline quality without extensive Si intermixing (with 91 atom % Ge). Nanotip-patterned wafers result in geometric, kinetic-diffusion-barrier intermixing hindrance, confining the major intermixing to the pedestal region of Ge islands, where kinetic diffusion barriers are, however, high. Theoretical calculations suggest that the thin Si/Ge layer at the interface plays, nevertheless, a significant role in realizing our fully coherent Ge nanoislands free from extended defects especially dislocations. Single-layer graphene/Ge/Si-tip Schottky junctions were fabricated, and thanks to the absence of extended defects in Ge islands, they demonstrate high-performance photodetection characteristics with responsivity of ∼45 mA W(-1) and an Ion/Ioff ratio of ∼10(3). |
| Databáze: | OpenAIRE |
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