Low-temperature atomic layer deposition of ZnO thin films: Control of crystallinity and orientation
| Autor: | Maarit Karppinen, Elina Sahramo, Juho Perälä, Timo Sajavaara, Jari Malm |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: |
Materials science
Annealing (metallurgy) Mineralogy 02 engineering and technology 01 natural sciences Atomic layer deposition chemistry.chemical_compound Crystallinity 0103 physical sciences Materials Chemistry Thin film ta116 010302 applied physics chemistry.chemical_classification ta114 Metals and Alloys Surfaces and Interfaces Polymer Diethylzinc Atmospheric temperature range 021001 nanoscience & nanotechnology Surfaces Coatings and Films Electronic Optical and Magnetic Materials Carbon film chemistry Chemical engineering 0210 nano-technology |
| Zdroj: | THIN SOLID FILMS. 519(16):5319-5322 |
| ISSN: | 0040-6090 |
| Popis: | Low-temperature atomic layer deposition (ALD) processes are intensely looked for to extend the usability of the technique to applications where sensitive substrates such as polymers or biological materials need to be coated by high-quality thin films. A preferred film orientation, on the other hand, is often required to enhance the desired film properties. Here we demonstrate that smooth, crystalline ZnO thin films can be deposited from diethylzinc and water by ALD even at room temperature. The depositions were carried out on Si(100) substrates in the temperature range from 23 to 140 °C. Highly c-axis-oriented films were realized at temperatures below ~ 80 °C. The film crystallinity could be further enhanced by post-deposition annealing under O2 or N2 atmosphere at 400–600 °C while keeping the original film orientation intact. |
| Databáze: | OpenAIRE |
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