Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure
Autor: | Kuan Lin, Hsin-Chiang You, Keng-Hsien Chao, Cheng-Jyun Wang, Jen-Hung Ou, Fu-Hsiang Ko |
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Jazyk: | angličtina |
Rok vydání: | 2019 |
Předmět: |
Materials science
Photodetector Substrate (electronics) lcsh:Technology Article zinc oxide-based thin-film transistors General Materials Science lcsh:Microscopy Plasmon plasmonic energy detection lcsh:QC120-168.85 lcsh:QH201-278.5 business.industry lcsh:T Surface plasmon phototransistors Heterojunction Tin oxide Threshold voltage gold-nanoparticles lcsh:TA1-2040 Optoelectronics lcsh:Descriptive and experimental mechanics lcsh:Electrical engineering. Electronics. Nuclear engineering business spray pyrolysis lcsh:Engineering (General). Civil engineering (General) lcsh:TK1-9971 Localized surface plasmon |
Zdroj: | Materials, Vol 12, Iss 21, p 3639 (2019) Materials Volume 12 Issue 21 |
ISSN: | 1996-1944 |
Popis: | Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. The spray-deposited channel layer of ZnO had a thickness of approximately 15 nm, and the thickness exhibited a linear increase with an increasing number of sprays. Furthermore, the ZnO thin-film exhibited a markedly smoother channel layer with a significantly lower surface roughness of 1.84 nm when the substrate was 20 cm from the spray nozzle compared with when it was 10 cm away. Finally, a ZnO and Au-NP heterojunction nanohybrid structure using plasmonic energy detection as an electrical signal, constitutes an ideal combination for a visible-light photodetector. The ZnO-based TFTs convert localized surface plasmon energy into an electrical signal, thereby extending the wide band-gap of materials used for photodetectors to achieve visible-light wavelength detection. The photo-transistors demonstrate an elevated on-current with an increase of the AuNP density in the concentration of 1.26, 12.6, and 126 pM and reach values of 3.75, 5.18, and 9.79 × 10&minus 7 A with applied gate and drain voltages. Moreover, the threshold voltage (Vth) also drifts to negative values as the AuNP density increases. |
Databáze: | OpenAIRE |
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