Seebeck coefficient of silicon nanowire forests doped by thermal diffusion
| Autor: | Giovanni Pennelli, Shaimaa Elyamny, Elisabetta Dimaggio |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Silicon seebeck coefficient Nanowire General Physics and Astronomy chemistry.chemical_element Physics::Optics Substrate (electronics) lcsh:Chemical technology lcsh:Technology Full Research Paper thermoelectricity Condensed Matter::Materials Science Etching (microfabrication) Seebeck coefficient Condensed Matter::Superconductivity Thermoelectric effect Nanotechnology General Materials Science thermal conductivity lcsh:TP1-1185 Electrical and Electronic Engineering lcsh:Science business.industry lcsh:T Doping lcsh:QC1-999 Nanoscience Thermoelectric generator chemistry nanowires Optoelectronics Condensed Matter::Strongly Correlated Electrons lcsh:Q business lcsh:Physics |
| Zdroj: | Beilstein Journal of Nanotechnology, Vol 11, Iss 1, Pp 1707-1713 (2020) Beilstein Journal of Nanotechnology |
| ISSN: | 2190-4286 |
| Popis: | Thermoelectric generators made by large arrays of nanowires perpendicular to a silicon substrate, that is, so-called silicon nanowire forests are fabricated on large areas by an inexpensive metal-assisted etching technique. After fabrication, a thermal diffusion process is used for doping the nanowire forest with phosphorous. A suitable experimental technique has been developed for the measurement of the Seebeck coefficient under static conditions, and results are reported for different doping parameters. These results are in good agreement with numerical simulations of the doping process applied to silicon nanowires. These devices, based on doped nanowire forests, offer a possible route for the exploitation of the high power factor of silicon, which, combined with the very low thermal conductivity of nanostructures, will yield a high efficiency of the conversion of thermal to electrical energy. |
| Databáze: | OpenAIRE |
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