Growth and Tailoring of Physical Properties of Si Quantum Dots in a-SiNx:H Matrix
| Autor: | P. C. Srivastava, Sarab Preet Singh, G. Vijaya Prakash, R. K. Bommali, Santanu Ghosh |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Photoluminescence Band gap business.industry Silicon rich silicon nitride PECVD Dielectric Fluence Swift Heavy Ion Irradiation Amorphous solid chemistry.chemical_compound Silicon nitride chemistry Energy(all) Quantum dot Plasma-enhanced chemical vapor deposition Optoelectronics business |
| Zdroj: | Energy Procedia. 41:50-56 |
| ISSN: | 1876-6102 |
| DOI: | 10.1016/j.egypro.2013.09.006 |
| Popis: | Silicon Quantum Dots (Si-QDs) embedded in dielectric matrices are being pursued as possible candidates for third generation solar cells. In this regard achieving higher QD density and control over size is of prime importance. Amorphous hydrogenated silicon nitride ( a -SiN x :H) is an attractive host for Si-QDs and can be used as an anti reflection coating due to the possibility of tuning its refractive index and bandgap. Irradiation of these films with energetic ions holds promise as a means to achieve greater control over density and size distribution of the embedded Si-QDs. We report on the effects of irradiation on structural and optical properties of Si rich a-SiNx:H films with 100MeV Ni 7+ ions. The films undergo compaction with increasing fluence. The structural changes due to irradiation and subsequent changes in the reflectance and luminescence are correlated. |
| Databáze: | OpenAIRE |
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