Robustness improvement of an SRAM cell against laser-induced fault injection
| Autor: | Assia Tria, Cyril Roscian, Alexandre Sarafianos, Mathieu Lisart, Valerie Serradeil, Jean-Max Dutertre, Olivier Gagliano |
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| Přispěvatelé: | STMicroelectronics [Tours] (ST-TOURS), Département Systèmes et Architectures Sécurisés (SAS-ENSMSE), École des Mines de Saint-Étienne (Mines Saint-Étienne MSE), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-CMP-GC, Laboratoire Systèmes et Architectures Sécurisés (LSAS), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-CMP-GC-École des Mines de Saint-Étienne (Mines Saint-Étienne MSE), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-CMP-GC-CEA Tech en régions (CEA-TECH-Reg), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA) |
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
Engineering
Electrical model Hardware_PERFORMANCEANDRELIABILITY 01 natural sciences law.invention [SPI]Engineering Sciences [physics] law Robustness (computer science) 0103 physical sciences Electronic engineering Static random-access memory [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Single Event Upset Radiation hardened NMOS logic 010302 applied physics SRAM cell 010308 nuclear & particles physics business.industry Transistor Sram cell Laser fault injection Fault injection Laser triple well business |
| Zdroj: | Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2013 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2013 IEEE International Symposium on, Oct 2013, New York, United States. ⟨10.1109/DFT.2013.6653598⟩ DFTS |
| Popis: | International audience; This paper presents the design of an SRAM cell with a robustness improvement against laser-induced fault injection. We report the fault sensitivity mapping of a first SRAM design. A careful analysis of its results combined with the use of an electrical model at transistor level of the photoelectric effect induced by a laser permit us to validate our approach. The robustness improvement is due to a specific layout which takes into account the topology of the cell and to the effect of a triple well implant on the laser sensitivity of NMOS transistors. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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