Numerical Analysis of Gate-All-Around HfO2/TiO2/HfO2 High-K Dielectric Based WSe2 NCFET With Reduced Sub-Threshold Swing and High On/Off Ratio
| Autor: | Catherine Stampfl, Md. Sherajul Islam, Kamal Hosen, Jeongwon Park |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Field effect transistor
Materials science General Computer Science Transconductance gate-all-around Dielectric Lead zirconate titanate Capacitance chemistry.chemical_compound MOSFET ComputingMethodologies_SYMBOLICANDALGEBRAICMANIPULATION ferroelectric materials General Materials Science High-κ dielectric business.industry General Engineering 2D materials TK1-9971 chemistry ComputingMethodologies_DOCUMENTANDTEXTPROCESSING Optoelectronics Field-effect transistor Electrical engineering. Electronics. Nuclear engineering business Negative impedance converter negative capacitance |
| Zdroj: | IEEE Access, Vol 9, Pp 116254-116264 (2021) |
| ISSN: | 2169-3536 |
| Popis: | Gate-all-around (GAA) field effect transistors (FETs) have appeared as one of the potential candidates for the electrostatic integrity required to reduce MOSFETs to minimum channel lengths. Meanwhile, the negative capacitance effect of ferroelectrics is known as a remarkable quality enhancer for MOSFETs in terms of reducing sub-threshold slope (SS), supply voltage, and power consumption by utilizing the gate voltage amplification phenomenon. In this work, combining these two phenomena we numerically design a cylindrical GAA NCFET where promising two-dimensional WSe2 is used as a channel material. We have suggested a high-K dielectric consisting of a tri-layer HfO2/TiO2/HfO2 and lead zirconate titanate (PZT) as a ferroelectric layer in the gate stacking. The extremely high $I_{on}/I_{off}$ ratio on the order of 1012 (six order higher than conventional FET), and the high on-state current of $119~\mu \text{A}$ are the most remarkable findings of this device which exceeds all the earlier results. The integration of the NC effect utilizing a 20 nm PZT offers lowest $SS$ of 18.9 mV/dec. Moreover, a large transconductance ( $g_{m}$ ) of $117~\mu \text{S}$ and a higher current cut-off frequency ( $f_{T}$ ) of 335 GHz were reported from the output characteristics. These outcomes allude that the suggested device structure may create a new path for electronic devices; therefore, it can be used for high speed operation with low power consumption. |
| Databáze: | OpenAIRE |
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