Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers
| Autor: | Michail Yesin, A. I. Nikiforov, Vyacheslav Timofeev, V. I. Mashanov, A. R. Tuktamyshev, A. A. Bloshkin |
|---|---|
| Přispěvatelé: | Timofeev, V, Nikiforov, A, Tuktamyshev, A, Mashanov, V, Yesin, M, Bloshkin, A |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Photoluminescence
Materials science Reflection high-energy electron diffraction сканирующая туннельная микроскопия Band diagram 02 engineering and technology Epitaxy 01 natural sciences Nanoislands 0103 physical sciences lcsh:TA401-492 General Materials Science полупроводниковые пленки дифракция Phase diagram 010302 applied physics Nanoisland Superstructure Condensed matter physics Nano Express business.industry эпитаксия Segregation фотолюминесценция 021001 nanoscience & nanotechnology Condensed Matter Physics Semiconductor Electron diffraction GeSiSn layer оптические свойства Scanning tunnel microscopy lcsh:Materials of engineering and construction. Mechanics of materials 0210 nano-technology business Superstructure (condensed matter) Diffraction |
| Zdroj: | Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-8 (2018) Nanoscale Research Letters Nanoscale research letters. 2018. Vol. 13. P. 29 (1-8) |
| ISSN: | 1931-7573 |
| DOI: | 10.1186/s11671-017-2429-6 |
| Popis: | The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the growth temperature of 150 °С have been obtained. The phase diagrams of the superstructure change during the epitaxial growth of Sn on Si and on Ge(100) have been built. Using the phase diagram data, it becomes possible to identify the Sn cover on the Si surface and to control the Sn segregation on the superstructure observed on the reflection high-energy electron diffraction (RHEED) pattern. The multilayer structures with the GeSiSn pseudomorphic layers and island array of a density up to 1.8 × 1012 cm−2 have been grown with the considering of the Sn segregation suppression by the decrease of GeSiSn and Si growth temperature. The double-domain (10 × 1) superstructure related to the presence of Sn on the surface was first observed in the multilayer periodic structures during Si growth on the GeSiSn layer. The periodical GeSiSn/Si structures demonstrated the photoluminescence in the range of 0.6–0.85 eV corresponding to the wavelength range of 1.45–2 μm. The calculation of the band diagram for the structure with the pseudomorphic Ge0.315Si0.65Sn0.035 layers allows assuming that photoluminescence peaks correspond to the interband transitions between the X valley in Si or the Δ4-valley in GeSiSn and the subband of heavy holes in the GeSiSn layer. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink