Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation

Autor:	R. Fontanini, M. Segatto, K. S. Nair, M. Holzer, F. Driussi, I. Hausler, C. T. Koch, C. Dubourdieu, V. Deshpande, D. Esseni
Jazyk:	angličtina
Rok vydání:	2022
Předmět:	Charge trapping ferroelectric tunneling junction optimization synaptic device Charge trapping synaptic device Electrical and Electronic Engineering optimization ferroelectric tunneling junction Electronic Optical and Magnetic Materials
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e57bb87c891d4df2d8a9aa76c15e5e4c http://hdl.handle.net/11390/1229765 Zobrazit plný text záznamu