Improvement of Electrical Performance by Neutron Irradiation Treatment on IGZO Thin Film Transistors
| Autor: | Kwun-Bum Chung, Byung-Hyuk Jun, Jongin Hong, Sera Kwon |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
inorganic chemicals
Materials science Oxide Field effect chemistry.chemical_element thin-film transistor Electronic structure Oxygen chemistry.chemical_compound Materials Chemistry Electrical performance Neutron irradiation neutron irradiation igzo business.industry technology industry and agriculture Surfaces and Interfaces electronic structure Surfaces Coatings and Films chemistry electrical performance Thin-film transistor lcsh:TA1-2040 Optoelectronics business lcsh:Engineering (General). Civil engineering (General) Voltage |
| Zdroj: | Coatings, Vol 10, Iss 2, p 147 (2020) Coatings Volume 10 Issue 2 |
| ISSN: | 2079-6412 |
| Popis: | The effects of the neutron irradiation treatment on indium-gallium-zinc oxide (IGZO) are investigated as a function of the neutron irradiation time. With an increase in neutron irradiation time, the oxygen vacancies associated the oxygen deficient states increase, and both shallow and deep band edge states below the conduction band also increase. Moreover, the conduction band offset continuously decreases because of the increase in the oxygen vacancies with increasing the neutron irradiation time. In IGZO TFTs with the neutron irradiation time for 10 s, superior device performance demonstrates such as the lower threshold voltage, higher field effect mobility, smaller sub-threshold gate swing, larger on-off current ratio, and improved bias stability, comparing those of other IGZO TFTs. |
| Databáze: | OpenAIRE |
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