Novel FDSOI band-modulation device: Z 2 -FET with Dual Ground Planes
| Autor: | H. El Dirani, Yohann Solaro, Sorin Cristoloveanu, P. Ferrari, Pascal Fonteneau |
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| Přispěvatelé: | Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), STMicroelectronics [Crolles] (ST-CROLLES), European Project: 662175,H2020,ECSEL-2014-2,WAYTOGO FAST(2015) |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Silicon on insulator 02 engineering and technology 01 natural sciences 1T-DRAM 0103 physical sciences [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Electro-Static Discharge (ESD) Fully Depleted SOI (FDSOI) 010302 applied physics business.industry Hysteresis Electrical engineering Zero Impact Ionization and Zero Subthreshold Slope FET 021001 nanoscience & nanotechnology Subthreshold slope Anode Impact ionization Modulation Dual Ground Planes Logic gate Ultra-Thin Body and BOX (UTBB) Optoelectronics 0210 nano-technology business Voltage Sharp Switch |
| Zdroj: | 2016 ESSDERC Proceedings 2016 ESSDERC-46th European Solid-State Device Research Conference 2016 ESSDERC-46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.210-213, ⟨10.1109/ESSDERC.2016.7599623⟩ ESSDERC |
| Popis: | session A5L-C: Novel Devices; International audience; A novel sharp switching Z 2 -FET DGP device (Zero Impact Ionization and Zero Subthreshold Slope FET with Dual Ground Planes) relying on band modulation mechanism is presented in this paper. The device is fabricated in the most advanced FDSOI (Fully Depleted SOI) technology with Ultra-Thin Body and Buried Oxide (UTBB). The Z 2 -FET DGP is an upgraded version of Z 2 -FET. It features sharp on-switch, adjustable triggering voltage (Vt1), and wide hysteresis useful for 1T-DRAM memory. |
| Databáze: | OpenAIRE |
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