Structural mechanism of voltage-dependent gating in an isolated voltage-sensing domain

Autor: Qufei Li, Eduardo Perozo, Klaus Schulten, David Medovoy, Sherry Wanderling, Raymond E. Hulse, Anthony A. Kossiakoff, Carlos A. Villalba-Galea, Abhishek Singharoy, Ryan McGreevy, Benoît Roux, Marcin Paduch
Rok vydání: 2014
Předmět:
Zdroj: Nature Structural & Molecular Biology. 21:244-252
ISSN: 1545-9985
1545-9993
DOI: 10.1038/nsmb.2768
Popis: The transduction of transmembrane electric fields into protein motion plays an essential role in the generation and propagation of cellular signals. Voltage-sensing domains (VSD) carry out these functions through reorientations of S4 helix with discrete gating charges. Here, crystal structures of the VSD from Ci-VSP were determined in both, active (Up) and resting (Down) conformations. The S4 undergoes a ~5 Å displacement along its main axis accompanied by a ~60o rotation, consistent with the helix-screw gating mechanism. This movement is stabilized by a change in countercharge partners in helices S1 and S3, generating an estimated net charge transfer of ~1 eo. Gating charges move relative to a “hydrophobic gasket” that electrically divides intra and extracellular compartments. EPR spectroscopy confirms the limited nature of S4 movement in a membrane environment. These results provide an explicit mechanism for voltage sensing and set the basis for electromechanical coupling in voltage-dependent cellular activities.
Databáze: OpenAIRE