Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550 nm
| Autor: | Robert W. Kelsall, Gerald S. Buller, Andrew P. Knights, N.J. Pilgrim, Ryan E. Warburton, Edgar Huante-Ceron, L. Lever, Phil Allred, Maksym Myronov, Kevin Gallacher, David R. Leadley, G. Intermite, Douglas J. Paul, Zoran Ikonic |
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| Rok vydání: | 2013 |
| Předmět: |
Fabrication
Avalanche diode Materials science business.industry TK Detector 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials 010309 optics Wavelength Optics Single-photon avalanche diode 0103 physical sciences Optoelectronics Electrical and Electronic Engineering Photonics 0210 nano-technology business Absorption (electromagnetic radiation) Dark current |
| Zdroj: | IEEE Transactions on Electron Devices. 60:3807-3813 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2013.2282712 |
| Popis: | The design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented. At 100 K, a single-photon detection efficiency of 4% at 1310 nm wavelength was measured with a dark count rate of ~ 6 megacounts/s, resulting in the lowest reported noise-equivalent power for a Ge-on-Si single-photon avalanche diode detector (1×10-14 WHz-1/2). The first report of 1550 nm wavelength detection efficiency measurements with such a device is presented. A jitter of 300 ps was measured, and preliminary tests on after-pulsing showed only a small increase (a factor of 2) in the normalized dark count rate when the gating frequency was increased from 1 kHz to 1 MHz. These initial results suggest that optimized devices integrated on Si substrates could potentially provide performance comparable to or better than that of many commercially available discrete technologies. |
| Databáze: | OpenAIRE |
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