Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium
| Autor: | D. Yu. Matveev |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Radiation
Materials science Carrier scattering Inorganic chemistry Doping chemistry.chemical_element Condensed Matter Physics mobility Bismuth Condensed Matter::Materials Science chemistry thin films size effect Condensed Matter::Superconductivity tellurium bismuth Physics::Atomic and Molecular Clusters General Materials Science Condensed Matter::Strongly Correlated Electrons Physics::Atomic Physics Tellurium |
| Popis: | The article compares carrier mobility in monocrystals, as well as monocrystal and block films of different width thus defining carrier contribution to interaction with phonons, surface, boundaries and structural defects of crystallites in bismuth films doped with tellurium. It is determined that there is a linear dependence of inverse electron mobility on inverse width of bismuth film doped with tellurium. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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