Cyclic Voltammetry Peaks Due to Deep Level Traps in Si Nanowire Array Electrodes
| Autor: | Tim Albrecht, Foivia Konstantinou, Abdurrahman Shougee, Kristel Fobelets |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Technology
DEVICES Silicon Materials Science Nanowire Analytical chemistry chemistry.chemical_element Materials Science Multidisciplinary SEMICONDUCTOR 02 engineering and technology deep level traps 01 natural sciences Capacitance Physics Applied symbols.namesake Engineering Silicon nanowires 0103 physical sciences supercapacitor Nanoscience & Nanotechnology Electrical and Electronic Engineering 010302 applied physics Science & Technology 1007 Nanotechnology Physics Doping Fermi level Engineering Electrical & Electronic 0303 Macromolecular and Materials Chemistry 021001 nanoscience & nanotechnology Isotropic etching Computer Science Applications 0906 Electrical and Electronic Engineering electrochemistry chemistry Physical Sciences Electrode symbols Science & Technology - Other Topics 1/F NOISE Cyclic voltammetry 0210 nano-technology MICROSTRUCTURES |
| Zdroj: | IEEE Transactions on Nanotechnology. 17:154-160 |
| ISSN: | 1941-0085 1536-125X |
| Popis: | When metal-assisted chemical etching (MACE) is used to increase the effective surface area of Si electrodes for electrochemical capacitors, it is often found that the cyclic voltammetry characteristics contain anodic and cathodic peaks. We link these peaks to the charging-discharging dynamics of deep level traps within the nanowire system. The trap levels are associated with the use of Ag in the MACE process that can leave minute amounts of Ag residue within the nanowire system to interact with the H2O layer surrounding the nanowires in a room temperature ionic liquid. The influence of the traps can be removed by shifting the Fermi level away from the trap levels via spin-on doping. These results in lower capacitance values but improved charge-discharge cycling behavior. Low-frequency noise measurements proof the presence or absence of these deep level traps. |
| Databáze: | OpenAIRE |
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