Thermal detection of single e-h pairs in a biased silicon crystal detector
Autor: | J. J. Yen, Betty A. Young, T. Howarth, Robert A. Moffatt, M. Cherry, R. Partridge, P. L. Brink, Astrid Tomada, Fernando Ponce, S. J. Yellin, R. K. Romani, Matt Pyle, Blas Cabrera, Noah Kurinsky |
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Jazyk: | angličtina |
Rok vydání: | 2017 |
Předmět: |
Physics
Photon Physics - Instrumentation and Detectors Physics and Astronomy (miscellaneous) 010308 nuclear & particles physics Phonon FOS: Physical sciences Charge (physics) Instrumentation and Detectors (physics.ins-det) 01 natural sciences Monocrystalline silicon Crystal 0103 physical sciences Transition edge sensor Atomic physics 010306 general physics Energy (signal processing) Noise (radio) |
Popis: | We demonstrate that individual electron-hole pairs are resolved in a 1 cm$^2$ by 4 mm thick silicon crystal (0.93 g) operated at $\sim$35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted electro-thermal-feedback transition edge sensor (QET) arrays held near ground potential. The other side contains a bias grid with 20\% coverage. Bias potentials up to $\pm$ 160 V were used in the work reported here. A fiber optic provides 650~nm (1.9 eV) photons that each produce an electron-hole ($e^{-} h^{+}$) pair in the crystal near the grid. The energy of the drifting charges is measured with a phonon sensor noise $\sigma$ $\sim$0.09 $e^{-} h^{+}$ pair. The observed charge quantization is nearly identical for $h^+$'s or $e^-$'s transported across the crystal. Comment: 4 journal pages, 5 figures |
Databáze: | OpenAIRE |
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