A sharp-switching device with free surface and buried gates based on band modulation and feedback mechanisms
| Autor: | Sorin Cristoloveanu, C. Fenouillet-Beranger, Philippe Ferrari, Yohann Solaro, Pascal Fonteneau, Charles-Alexandre Legrand |
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| Přispěvatelé: | Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA) |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Z3-FET Z2-FET Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 01 natural sciences 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Materials Chemistry [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Electrical and Electronic Engineering SOI 010302 applied physics business.industry CMOS Electrical engineering Swing 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials Impact ionization Sharp switch Modulation Band modulation Free surface Optoelectronics 0210 nano-technology business Hardware_LOGICDESIGN |
| Zdroj: | Solid-State Electronics Solid-State Electronics, 2016, 116, pp.8-11. ⟨10.1016/j.sse.2015.10.010⟩ Solid-State Electronics, Elsevier, 2016, 116, pp.8-11. ⟨10.1016/j.sse.2015.10.010⟩ |
| ISSN: | 0038-1101 |
| Popis: | We propose and demonstrate experimentally a band-modulation device with extremely sharp switching capability. The Z 3 -FET (Zero gate, Zero swing and Zero impact ionization) has no top gate, is processed with FDSOI CMOS technology, and makes use of two adjacent buried ground planes acting as back gates. The buried gates emulate respectively N + and P + regions in the undoped body, forming a virtual thyristor-like NPNP structure with feedback operation. Vertical output I A – V A and transfer I A – V G characteristics over more than 8 decades of current are measured with relatively low gate and drain bias ( |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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