Microwave power limiters based on RF-MEMS
Autor: | J. Gauvin, Pierre Blondy, O. Vendier, J.-L. Cazaux |
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Přispěvatelé: | MINACOM (XLIM-MINACOM), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Thales Alenia Space (TAS), THALES, Thales Alenia Space - TAS (Toulouse, France), Thales (France) |
Rok vydání: | 2013 |
Předmět: |
Materials science
Switched-mode power supply business.industry RF power amplifier Electrical engineering 020206 networking & telecommunications 02 engineering and technology Power factor 01 natural sciences Power (physics) Power module Low-power electronics 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Limiter Electronic engineering Power semiconductor device [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 010306 general physics business |
Zdroj: | Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on, Jan 2013, Taipei Taiwan. ⟨10.1109/MEMSYS.2013.6474356⟩ |
Popis: | International audience; This paper presents a novel application of MEMS to RF signals: microwave power limiters. A 10.24GHz RF-MEMS based limiter with a 28.2dBm threshold power and a dynamic range of more than 8dB is presented limiting the output power to 27.5dBm with 0.65dB insertion losses. For low power applications, the output limited power can be decreased by biasing RF-MEMS. By biasing the device at 5.2V (Vp = 5.6V), a 10.24GHz power limiter with a 14.2dBm threshold power and a dynamic range of more than 13dB is obtained and the limited output power is only 13.8dBm. Losses of the biased limiter are 1dB. Simulations of a Computer Aided Design (CAD) integrated behavioral model of capacitive RF-MEMS switch have been compared with measured data with good agreement. |
Databáze: | OpenAIRE |
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