Fully Depleted MAPS in 110-nm CMOS Process With 100-300-μm Active Substrate
| Autor: | Massimo Caccia, Lucio Pancheri, Angelo Rivetti, Andrea Di Salvo, J. Olave, Thomas Corradino, Raffaele Aaron Giampaolo, Serena Mattiazzo, Piero Giubilato, Giovanni Margutti, M.D. Rolo, Romualdo Santoro |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Digital electronics CMOS sensor Silicon Materials science Pixel business.industry CMOS Substrate (electronics) Microbeam Radiation 01 natural sciences Particle detector Electronic Optical and Magnetic Materials Monolithic active pixel sensor (MAPS) Radiation detector 0103 physical sciences Optoelectronics Electrical and Electronic Engineering business |
| Popis: | This article presents a fully depleted monolithic active pixel sensor technology compatible with a standard deep submicrometer 110-nm CMOS process. Passive test pixels structures, produced in various flavors, have proved the feasibility of 100- and 300- $\mu \text{m}$ -thick active substrates. Active pixel sensors with monolithically integrated analog and digital electronics, consisting of a 24 $\times $ 24 array of pixels with 50- $\mu \text{m}$ pitch, have been shown to be fully functional when operating in the full depletion mode. Characterization results obtained with a proton microbeam and a 55Fe radiation source are presented and discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|