Effect of concentration of Nd3+ on the photoluminescence and ferroelectric properties of Bi4-xNdxTi3O12 films
| Autor: | Ruzhong Zuo, Enyang Men, Yudong Xu, Zhuolin Si, Guannan Qiu, Kunzhuang Hu, Min Shi |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Photoluminescence
Materials science Band gap Analytical chemistry Substrate (electronics) Dielectric Condensed Matter Physics Ferroelectricity Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Light emission Dielectric loss Electrical and Electronic Engineering Polarization (electrochemistry) |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 32:15653-15664 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-021-06117-9 |
| Popis: | Lead-free films of Bi4-xNdxTi3O12 were deposited on Pt(111)/Ti/SiO2/Si(100) substrate via spin-coating methods. It is shown that there are no secondary phases in Bi4-xNdxTi3O12 films and clear interfaces between the Bi4-xNdxTi3O12 films and substrates when the films are annealed at 700 ℃. And the Bi4-xNdxTi3O12 films also exhibit a blue light emission peak at 437 nm and a yellow light emission peak at 580 nm. There are narrower band gaps, higher dielectric constant and lower dielectric loss when Nd3+ concentration varies from 0 to 0.85. And the Bi3.15Nd0.85Ti3O12 film possesses the minimum of band gap energy (2.67 eV). Moreover, Bi3.55Nd0.45Ti3O12 film exhibits a minimal leakage current density and a maximal remanent polarization, which is highly beneficial for the potential applications in multi-functional devices. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink