Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography
| Autor: | Sònia Estradé, J. M. Rebled, A. Bengoechea-Encabo, Francesca Peiró, S. Albert, L.L. López, Gilles Nataf, Miguel Sanchez-Garcia, P. de Mierry, Jesús Zúñiga-Pérez, Enrique Calleja |
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| Rok vydání: | 2012 |
| Předmět: |
010302 applied physics
Materials science Plane (geometry) business.industry Física 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Inorganic Chemistry Colloid Nanolithography Template Homogeneous 0103 physical sciences Materials Chemistry Optoelectronics 0210 nano-technology Anisotropy business Lithography Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth, ISSN 0022-0248, 2012-08, Vol. 353, No. 1 Archivo Digital UPM Universidad Politécnica de Madrid Journal of Crystal Growth |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2011.11.069 |
| Popis: | Selective area growth of a -plane GaN nanocolumns by molecular beam epitaxy was performed for the first time on a -plane GaN templates. Ti masks with 150 nm diameter nanoholes were fabricated by colloidal lithography, an easy, fast and cheap process capable to handle large areas. Even though colloidal lithography does not provide a perfect geometrical arrangement like e-beam lithography, it produces a very homogeneous mask in terms of nanohole diameter and density, and is used here for the first time for the selective area growth of GaN. Selective area growth of a -plane GaN nanocolumns is compared, in terms of anisotropic lateral and vertical growth rates, with GaN nanocolumns grown selectively on the c -plane. |
| Databáze: | OpenAIRE |
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