A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode
| Autor: | Yu Wu, Xintian Zhou, Yunpeng Jia, Xinyu Li, Dongqing Hu, Xingyu Fang, Zhonghan Deng, Yuanfu Zhao |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
business.industry Doping Schottky diode figure of merit Split-gate-trench MOSFET Electronic Optical and Magnetic Materials TK1-9971 reverse recovery characteristics Logic gate MOSFET Trench Figure of merit Optoelectronics Electrical engineering. Electronics. Nuclear engineering Electrical and Electronic Engineering business built-in channel diode current distribution Biotechnology Voltage Diode |
| Zdroj: | IEEE Journal of the Electron Devices Society, Vol 9, Pp 839-845 (2021) |
| ISSN: | 2168-6734 |
| Popis: | A novel split-gate-trench MOSFET integrated with normal gate and built-in channel diode (BCD) in the same trench is proposed and simulated with Sentaurus TCAD in this paper. Compared with the conventional SGT MOSFET (C-SGT MOS) and conventional SGT MOSFET with built-in channel diode (CBCD-SGT MOS), the proposed MOSFET exhibits superior performances, such as smaller turn-on voltage and lower reverse recovery charges when working in the third quadrant, and reduced gate charge and gate-to-drain charge when working in the first quadrant. With the negligible degradation of the on-state resistance, significant improvements in the figures of merit can be obtained. What’s more, obvious uniform forward and reverse conduction current distribution of proposed structure is observed compared to CBCD-SGT MOS although two types of devices are both featuring BCD structure, which could increase the robustness of device when working in high-power and high-frequency applications. |
| Databáze: | OpenAIRE |
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