Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device
| Autor: | C. T. Foxon, E. De Ranieri, Gen Tatara, R. P. Campion, K. Olejník, Kaiyou Wang, B. L. Gallagher, K. W. Edmonds, J. Wunderlich, David A. Williams, A. W. Rushforth, Andrew C. Irvine |
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| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: |
Condensed Matter - Materials Science
Materials science Physics and Astronomy (miscellaneous) Magnetic domain Condensed matter physics Condensed Matter - Mesoscale and Nanoscale Physics Transition temperature Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences Motion (geometry) 02 engineering and technology Atmospheric temperature range 021001 nanoscience & nanotechnology 01 natural sciences Domain wall (magnetism) Ferromagnetism Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 0103 physical sciences Torque Current (fluid) 010306 general physics 0210 nano-technology |
| Popis: | Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This is enabled by a much weaker domain wall pinning compared to (Ga,Mn)As layers grown on a strain-relaxed buffer layer. The critical current is shown to be comparable with theoretical predictions. The wide temperature range over which domain wall motion can be achieved indicates that this is a promising system for developing an improved understanding of spin-transfer torque in systems with strong spin-orbit interaction. 12 pages, 3 figures |
| Databáze: | OpenAIRE |
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