Modeling the impact of temperature effect and polarization phenomenon on InGaN/GaN-Multi-quantum well solar cells
Autor: | Abdullah Bajahzar, Asmae El Aouami, El Mustapha Feddi, Mohamed Hichem Gazzah, Bilel Chouchen, Francis Dujardin, Hafedh Belmabrouk |
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Přispěvatelé: | Université de Monastir - University of Monastir (UM), Laboratoire de Matière Condensée et Sciences Interdisciplinaires (LaMCScI), University of Mohammed V, Majmaah University, Laboratoire de Chimie et Physique - Approche Multi-échelle des Milieux Complexes (LCP-A2MC), Université de Lorraine (UL) |
Jazyk: | angličtina |
Rok vydání: | 2019 |
Předmět: |
Materials science
Multiple quantum chemistry.chemical_element 02 engineering and technology 7. Clean energy 01 natural sciences 010309 optics Condensed Matter::Materials Science 0103 physical sciences Electrical and Electronic Engineering [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] Quantum well ComputingMilieux_MISCELLANEOUS Electronic properties [PHYS]Physics [physics] business.industry Heterojunction 021001 nanoscience & nanotechnology Polarization (waves) Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Polarization phenomenon chemistry Optoelectronics 0210 nano-technology business Indium |
Zdroj: | Optik Optik, Elsevier, 2019, 199, pp.163385. ⟨10.1016/j.ijleo.2019.163385⟩ |
ISSN: | 0030-4026 |
DOI: | 10.1016/j.ijleo.2019.163385⟩ |
Popis: | Taking into consideration the effects of electronic properties (and their behavior under temperature), we present a new numerical model for the determination of the characteristic parameters of the InGaN/GaN multiple quantum well solar cells. Our approach shows that it is possible to enhance the performance of the InGaN/GaN MQW by tuning the electronic properties and by introducing the impact of the polarization of heterostructures with N-face and for an optimal indium composition. |
Databáze: | OpenAIRE |
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