Predictable quantum efficient detector based on n-type silicon photodiodes

Autor: M. Merimaa, Meelis Sildoja, Chi Kwong Tang, Mikko A. Juntunen, Mika Prunnila, Jarle Gran, Farshid Manoocheri, Esa Tuovinen, Maria Luisa Rastello, Alicia Pons, Ingmar Müller, Péter Gál, Erkki Ikonen, Marek Smid, Giorgio Brida, L. Lolli, Timo Dönsberg, Hannu Ronkainen, Hele Savin, B. Rougié, Lutz Werner
Přispěvatelé: European Metrology Research Programme, University of Helsinki, SCOAP, Dept Signal Process and Acoust, Department of Electronics and Nanoengineering, VTT Technical Research Centre of Finland, Justervesenet, Physikalisch-Technische Bundesanstalt, Laboratoire Commun de Métrologie LNE-CNAM, CSIC, Czech Metrology Institute, Magyar Kereskedelmi Engedélyezési Hivatal (MKEH), INRiM, Aalto-yliopisto, Aalto University, Helsinki Institute of Physics
Rok vydání: 2017
Předmět:
Zdroj: Digital.CSIC. Repositorio Institucional del CSIC
instname
Dönsberg, T, Manoocheri, F, Sildoja, M, Juntunen, M, Savin, H, Tuovinen, E, Ronkainen, H, Prunnila, M, Merimaa, M, Tang, C K, Gran, J, Müller, I, Werner, L, Rougié, B, Pons, A, Smîd, M, Gál, P, Lolli, L, Brida, G, Rastello, M L & Ikonen, E 2017, ' Predictable quantum efficient detector based on n-type silicon photodiodes ', Metrologia, vol. 54, no. 6, pp. 821-836 . https://doi.org/10.1088/1681-7575/aa85ed
ISSN: 1681-7575
Popis: Timo Dönsberg et al. -- 16 pags., 16 figs., 4 tabs. -- Open Access funded by Creative Commons Atribution Licence 3.0
The predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in a wedged trap configuration for the reduction of reflectance losses. Until now, all manufactured PQED photodiodes have been based on a structure where a SiO2 layer is thermally grown on top of p-type silicon substrate. In this paper, we present the design, manufacturing, modelling and characterization of a new type of PQED, where the photodiodes have an Al2O3 layer on top of n-type silicon substrate. Atomic layer deposition is used to deposit the layer to the desired thickness. Two sets of photodiodes with varying oxide thicknesses and substrate doping concentrations were fabricated. In order to predict recombination losses of charge carriers, a 3D model of the photodiode was built into Cogenda Genius semiconductor simulation software. It is important to note that a novel experimental method was developed to obtain values for the 3D model parameters. This makes the prediction of the PQED responsivity a completely autonomous process. Detectors were characterized for temperature dependence of dark current, spatial uniformity of responsivity, reflectance, linearity and absolute responsivity at the wavelengths of 488¿nm and 532¿nm. For both sets of photodiodes, the modelled and measured responsivities were generally in agreement within the measurement and modelling uncertainties of around 100 parts per million (ppm). There is, however, an indication that the modelled internal quantum deficiency may be underestimated by a similar amount. Moreover, the responsivities of the detectors were spatially uniform within 30¿ppm peak-to-peak variation. The results obtained in this research indicate that the n-type induced junction photodiode is a very promising alternative to the existing p-type detectors, and thus give additional credibility to the concept of modelled quantum detector serving as a primary standard. Furthermore, the manufacturing of PQEDs is no longer dependent on the availability of a certain type of very lightly doped p-type silicon wafers.
The research leading to these results has received funding from the European Metrology Research Programme (EMRP) project SIB57 'New Primary Standards and Traceability for Radiometry'. The EMRP is jointly funded by the EMRP participating countries within EURAMET and the European Union. Financial support from the Academy of Finland through the Finnish Centre of Excellence in Atomic Layer Deposition is also acknowledged.
Databáze: OpenAIRE
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