Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling
| Autor: | David Poppitz, F. Chiocchetta, Michél Simon-Najasek, Frank Altmann, Gaudenzio Meneghesso, Fabiana Rampazzo, Veronica Gao Zhan, Matteo Meneghini, D. Marcon, Andreas Graff, Enrico Zanoni |
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| Rok vydání: | 2020 |
| Předmět: |
microwave
Passivation Schottky barrier 02 engineering and technology High-electron-mobility transistor GaN HEMT HEMT scaling hot-electrons metal-semiconductor interdiffusion millimeter-wave 01 natural sciences Reliability (semiconductor) 0103 physical sciences Scaling 010302 applied physics Physics business.industry 021001 nanoscience & nanotechnology Extremely high frequency Optoelectronics Degradation (geology) 0210 nano-technology business Microwave |
| Zdroj: | IRPS |
| DOI: | 10.1109/irps45951.2020.9128358 |
| Popis: | This paper reviews failure modes and mechanisms of 0.5 μm, 0.25 μm and 0.15 μm AlGaN/GaN HEMTs for microwave and millimeter-wave applications. Early devices adopting Ni/Pt/Au metallization were found to be affected by sidewall interdiffusion of Au and O, followed by electrochemical oxidation of AlGaN, a problem which was solved by adopting a new metallization and passivation scheme providing 0.25 μm devices capable of withstanding 24h at V DS = 60V, on-state, T ch = 375°C with no failure. 4000 h long-term thermal storage tests with no bias identified a non-monotonic behaviour of gate Schottky barrier height, causing a temporary increase of gate leakage current which presented no risk for device reliability. Beside contact-related degradation mechanisms, hot electron effects become increasingly more relevant during DC life tests (inducing a 10% increase of on-resistance), rf tests (creating or re-activating deep levels, which increase current-collapse and reduce rf output power and gain). RF tests are the harshest ones for hot-electron degradation, which represents the limiting factor for GaN HEMTs having L G ≤ 0.15 μm. |
| Databáze: | OpenAIRE |
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