A low-voltage mobility-based frequency reference for crystal-less ULP radios
Autor: | Sebastiano, Fabio, Breems, Lucien J., Makinwa, Kofi A.A., Dargo, Salvatore, Drago, Salvatore, Leenaerts, Domine M.W., Nauta, Bram |
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Rok vydání: | 2008 |
Předmět: |
Electron mobility
Engineering Hardware_PERFORMANCEANDRELIABILITY Integrated circuit design Charge carrier mobility Crystal-less clock Relaxation oscillators law.invention Low voltage Reference circuit law Low-power electronics MOSFET Hardware_INTEGRATEDCIRCUITS Electronic engineering Electrical and Electronic Engineering Jitter business.industry Relaxation oscillator Transistor Electrical engineering Ultra-low power Wireless sensor networks Capacitor CMOS business CMOS analog integrated circuits |
Zdroj: | ESSCIRC Proceedings of the 34th European Solid-State Circuits Conference, ESSCIRC 2008, 306-309 STARTPAGE=306;ENDPAGE=309;TITLE=Proceedings of the 34th European Solid-State Circuits Conference, ESSCIRC 2008 IEEE journal of solid-state circuits, 44(7), 2002-2009. IEEE |
ISSN: | 0018-9200 |
Popis: | The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for application in wireless sensor networks (WSN). After a single-point calibration, the spread of its output frequency is less than 1.1% (3sigma) over the temperature range from -22degC to 85degC . Fabricated in a baseline 65 nm CMOS technology, the frequency reference circuit occupies 0.11 mm2 and draws 34 muA from a 1.2 V supply at room temperature. |
Databáze: | OpenAIRE |
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