Lattice parameter determination of a composition controlled Si1-x Gex layer on a Si (001) substrate using convergent-beam electron diffraction

Autor:	Takayuki Akaogi, Kenji Tsuda, Masami Terauchi, Michiyoshi Tanaka
Rok vydání:	2004
Předmět:	Silicon Crystallography Materials science Germanium Quantitative Biology::Tissues and Organs Crystal structure Convergent beam Epitaxy Lattice symmetry Tetragonal crystal system Lattice constant Microscopy Electron Transmission Electron diffraction Lattice (order) Nanotechnology Instrumentation
Zdroj:	Journal of Electron Microscopy. 53:593-600
ISSN:	1477-9986 0022-0744
DOI:	10.1093/jmicro/dfh091
Popis:	The six lattice parameters (a, b, c, alpha, beta and gamma) of Si(1-x)Ge(x), which was grown epitaxially on a Si (001) substrate with a varying Ge concentration, were determined by convergent-beam electron diffraction (CBED) without any assumption of crystal lattice symmetry. It was revealed that the lattice parameter c of Si(1-x)Ge(x) varies linearly with the Ge concentration and that the lattice symmetry is lowered from cubic to tetragonal, excluding an artifact due to the thinning of the specimen. The effect of strain relaxation that is caused by thinning specimens is discussed. Ge concentrations of examined specimen areas are evaluated using the obtained lattice parameters.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e303fe8b406883ca488f17f1d09cc3f8 https://doi.org/10.1093/jmicro/dfh091 Zobrazit plný text záznamu