Fine optical spectroscopy of the 3.45eV emission line in GaN nanowires
| Autor: | Julien Renard, Rafael Mata, Bruno Gayral, G. Tourbot, Diane Sam-Giao, Andrzej Wysmołek, Bruno Daudin |
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| Přispěvatelé: | Service de Physique des Matériaux et Microstructures (SP2M - UMR 9002), Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Materials Science Institute, University of Valencia, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institute of Experimental Physics [Warsaw] (IFD), Faculty of Physics [Warsaw] (FUW), University of Warsaw (UW)-University of Warsaw (UW) |
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
010302 applied physics
Materials science business.industry Exciton Nanowire Wide-bandgap semiconductor General Physics and Astronomy 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences 3. Good health 0103 physical sciences [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic Optoelectronics Emission spectrum Thin film [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 0210 nano-technology Luminescence Spectroscopy business ComputingMilieux_MISCELLANEOUS Molecular beam epitaxy |
| Zdroj: | Journal of Applied Physics Journal of Applied Physics, American Institute of Physics, 2013, 113, pp.043102. ⟨10.1063/1.4775492⟩ Journal of Applied Physics, 2013, 113, pp.043102. ⟨10.1063/1.4775492⟩ |
| ISSN: | 0021-8979 1089-7550 |
| DOI: | 10.1063/1.4775492⟩ |
| Popis: | GaN nanowires grown by plasma-assisted molecular beam epitaxy are of excellent optical quality, their optical signature being characteristic of homogeneous strain-free GaN. There are however discrepancies between the low temperature luminescence spectra of GaN thin films and nanowires, in particular, a strong emission line around 3.45 eV in nanowires is not found with such a large intensity in thin film GaN. The origin of this emission line in nanowires is still debated; in this article, we shed new light on this debate notably by polarization-resolved luminescence and magneto-luminescence experiments. Our findings demonstrate, in particular, that this line cannot be attributed to a two-electron satellite of the donor bound exciton transition. |
| Databáze: | OpenAIRE |
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