Electron beam induced current microscopy of silicon p–n junctions in a scanning transmission electron microscope
| Autor: | Grigore Moldovan, Eva Monroy, Aidan P. Conlan, Lucas Bruas, David Cooper |
|---|---|
| Přispěvatelé: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Point Electronic GmbH, Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA) |
| Rok vydání: | 2021 |
| Předmět: |
[PHYS]Physics [physics]
010302 applied physics Materials science Silicon business.industry Scanning electron microscope Electron beam-induced current General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Electron 021001 nanoscience & nanotechnology 01 natural sciences Electron holography [SPI]Engineering Sciences [physics] Depletion region chemistry 0103 physical sciences Scanning transmission electron microscopy Microscopy Optoelectronics 0210 nano-technology business |
| Zdroj: | Journal of Applied Physics Journal of Applied Physics, 2021, 129 (13), pp.135701. ⟨10.1063/5.0040243⟩ Journal of Applied Physics, American Institute of Physics, 2021, 129 (13), pp.135701. ⟨10.1063/5.0040243⟩ |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/5.0040243 |
| Popis: | International audience; A silicon p-n junction has been mapped using electron beam induced current in both a scanning transmission electron microscope (STEM) and a conventional scanning electron microscope (SEM). In STEM, the transmission of a higher energy electron beam through the thin specimen leads to better spatial resolution and a more uniform interaction volume than can be achieved in SEM. Better spatial resolution is also achieved in the thin TEM specimens as the diffusion lengths of the minority carriers are much lower than measured in bulk material due to the proximity of specimen surfaces. We further demonstrate that a positive fixed surface charge favors surface recombination of electrons in n-type silicon and induces a surface depletion region in p-type silicon. These results have been compared to off-axis electron holography measurements of the electrostatic potentials and simulations of the internal fields. |
| Databáze: | OpenAIRE |
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