Microwave functionality of spintronic devices implemented in a hybrid complementary metal oxide semiconductor and magnetic tunnel junction technology

Autor: Guillaume Prenat, Rui Ma, Laurent Vila, Ahmed Sidi El Valli, V. Iurchuk, J. Wrona, Jürgen Langer, Gregory Di Pendina, Ricardo C. Sousa, Ioan Lucian Prejbeanu, Florian Protze, A. Chavent, Martin Kreisig, Ursula Ebels, Frank Ellinger
Přispěvatelé: Technische Universität Dresden = Dresden University of Technology (TU Dresden), SPINtronique et TEchnologie des Composants (SPINTEC), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS), Singulus technology AG, European Project: 687973,H2020,H2020-ICT-2015,GREAT(2016), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: Electronics Letters, Vol 57, Iss 6, Pp 264-266 (2021)
Electronics Letters
Electronics Letters, IET, 2021, 57 (6), pp.264-266. ⟨10.1049/ell2.12103⟩
Electronics Letters, 2021, 57 (6), pp.264-266. ⟨10.1049/ell2.12103⟩
ISSN: 0013-5194
1350-911X
DOI: 10.1049/ell2.12103⟩
Popis: International audience; This letter presents magnetic tunnel junction based spintronic devices completely implemented in a hybrid semiconductor process that comprises a complementary metal oxide semiconductor and a magnetic tunnel junction technology. To demonstrate the coexistence of both complementary metal oxide semiconductor circuits and magnetic tunnel junction based spintronic devices, a proof-of-concept circuit prototype comprising 40 spintronic devices and a digital complementary metal oxide semiconductor serial peripheral interface is fabricated. According to measurement results, a selected spintronic device from the magnetic tunnel junction array, when surrounded by an external out-ofplane magnetic field of 1 kOe, emitted microwave signals from 2.235 to 2.464 GHz with an output power from 0.88 to 0.72 nW, when the DC current was increased from 0.6 to 1.0 mA. To the authors' best knowledge, this is the first work demonstrating the functionality of spintronic oscillators fully integrated in complementary metal oxide semiconductor circuit implemented in a hybrid complementary metal oxide semiconductor and magnetic tunnel junction process.
Databáze: OpenAIRE