Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part I: Impedance Analysis
| Autor: | Yusuf Leblebici, Denis Rideau, Herve Jaouen, Alban Zaka, Yoann Mamy Randriamihaja, Alexandre Schmid, Davide Garetto |
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| Předmět: |
Materials science
Silicon Analytical chemistry Oxide chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY Capacitance impedance characterization law.invention chemistry.chemical_compound multiphonon-assisted (MPA) capture law oxide degradation MOSFET Hardware_INTEGRATEDCIRCUITS Electrical and Electronic Engineering Electrical impedance business.industry Transistor Conductance Biasing Electronic Optical and Magnetic Materials chemistry Charge trapping Optoelectronics business Hardware_LOGICDESIGN |
| Popis: | Complementary MOS device electrical performances are considerably affected by the degradation of the oxide lay- ers and Si/SiO2 interfaces. A general expression for electrically stressed MOS impedance has been derived and applied within the nonradiative multiphonon theory of carrier capture/emission at oxide defects. The capacitance and the conductance of aged MOS field-effect transistor oxides, and their dependences on bias voltage, temperature, and stress conditions have been investigated. |
| Databáze: | OpenAIRE |
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