Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features
| Autor: | Daniel Staaks, Deirdre L. Olynick, XiaoMin Yang, Stefano Dallorto, Kim Yang Lee, Stefano Cabrini, Ivo W. Rangelow, Adam M. Schwartzberg |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Silicon dioxide Oxide Bioengineering 02 engineering and technology 01 natural sciences Nanoimprint lithography law.invention chemistry.chemical_compound Atomic layer deposition law 0103 physical sciences General Materials Science Electrical and Electronic Engineering Lithography 010302 applied physics business.industry Mechanical Engineering General Chemistry 021001 nanoscience & nanotechnology chemistry Mechanics of Materials Titanium dioxide Multiple patterning Optoelectronics 0210 nano-technology business Layer (electronics) |
| Zdroj: | Nanotechnology. 29(40) |
| ISSN: | 1361-6528 |
| Popis: | The next generation of hard disk drive technology for data storage densities beyond 5 Tb/in2 will require single-bit patterning of features with sub-10 nm dimensions by nanoimprint lithography. To address this challenge master templates are fabricated using pattern multiplication with atomic layer deposition (ALD). Sub-10 nm lithography requires a solid understanding of materials and their interactions. In this work we study two important oxide materials, silicon dioxide and titanium dioxide, as the pattern spacer and look at their interactions with carbon, chromium and silicon dioxide. We found that thermal titanium dioxide ALD allows for the conformal deposition of a spacer layer without damaging the carbon mandrel and eliminates the surface modification due to the reactivity of the metal-organic precursor. Finally, using self-assembled block copolymer lithography and thermal titanium dioxide spacer fabrication, we demonstrate pattern doubling with 7.5 nm half-pitch spacer features. |
| Databáze: | OpenAIRE |
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